Infineon FP20R06W1E3_B11 IGBT Module: Features, Applications, and Technical Specifications

Release date:2025-10-29 Number of clicks:131

Infineon FP20R06W1E3_B11 IGBT Module: Features, Applications, and Technical Specifications

The Infineon FP20R06W1E3_B11 is a highly integrated IGBT (Insulated Gate Bipolar Transistor) module designed for robust performance in medium-power switching applications. Combining high efficiency, reliability, and compact packaging, this module is engineered to meet the demanding requirements of modern power electronics systems.

Key Features

One of the standout attributes of this module is its low saturation voltage, which significantly reduces conduction losses and enhances overall system efficiency. It features a short-circuit rated IGBT design, ensuring device survival under fault conditions and improving system robustness. The module utilizes third-generation IGBT technology, offering an optimal trade-off between low losses and minimal turn-off tail current. Additionally, it is equipped with a fully isolated baseplate, providing excellent thermal performance and simplifying heatsink mounting while ensuring safety by meeting high isolation standards.

Primary Applications

The FP20R06W1E3_B11 is versatile and finds use in a wide array of industrial and commercial applications. It is predominantly employed in:

- Motor Drives and Controls: Serving as the core switching component in inverters for controlling AC motors in industrial automation, pumps, and fans.

- Uninterruptible Power Supplies (UPS): Ensuring efficient power conversion and reliable performance in critical backup power systems.

- Renewable Energy Systems: Used in solar inverters and wind power converters for efficient energy harvesting and grid integration.

- Industrial Welding Equipment: Providing the high switching frequency and durability required for welding machines.

Technical Specifications

The module is configured as a dual IGBT in a half-bridge topology, integrating two IGBTs and their corresponding anti-parallel diodes in a single package. Its key electrical characteristics include:

- Collector-Emitter Voltage (V_CES): 600 V

- Nominal Collector Current (I_C): 20 A at 80°C

- Max. Saturation Voltage (V_CE(sat)): 2.05 V (typical)

- High Isolation Voltage (V_iso): 2500 V (RMS)

This combination of voltage and current ratings makes it suitable for three-phase systems operating from standard AC line voltages.

ICGOODFIND Summary

The Infineon FP20R06W1E3_B11 is a highly reliable and efficient power module that excels in medium-power applications. Its advanced IGBT technology, integrated design, and robust construction make it an ideal choice for engineers designing motor drives, UPS systems, and industrial equipment, offering a perfect balance of performance and durability.

Keywords: IGBT Module, Motor Drives, Low Saturation Voltage, Half-Bridge Topology, Power Conversion

Home
TELEPHONE CONSULTATION
Whatsapp
Agent Brands