Infineon IPP037N08N: High-Performance OptiMOS Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of meeting these challenges is Infineon's IPP037N08N, a benchmark N-channel power MOSFET that exemplifies the advanced performance of the OptiMOS™ family. Engineered with cutting-edge trench technology, this device is a cornerstone for designers aiming to maximize efficiency in a wide array of power conversion applications.

A key highlight of the IPP037N08N is its exceptionally low on-state resistance (RDS(on)) of just 3.7 mΩ maximum at 10 V. This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates to less energy wasted as heat and higher overall system efficiency. Whether in a high-current switch or a synchronous rectifier, this characteristic ensures that more power is delivered to the load, making it ideal for demanding environments.

Complementing its low RDS(on) is an outstanding switching performance. The device features low gate charge (Qg) and low effective output capacitance (Coss(eff)). These parameters are critical for achieving fast switching speeds, which reduces switching losses—a dominant loss factor in high-frequency circuits. This allows power supply designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density and reducing the overall system footprint and cost.

The IPP037N08N is rated for 80 V drain-source voltage (VDS) and a continuous drain current (ID) of 100 A, making it exceptionally versatile. Its robustness is suited for a broad spectrum of applications, including:

Server and Telecom Power Supplies (SMPS)

Industrial Motor Drives and Controls

Synchronous Rectification in DC-DC Converters

Solar Inverters and Energy Storage Systems

High-Current Switch Mode Applications

Furthermore, the device is housed in a TO-220 FullPAK package. This package offers a key advantage: the drain tab is electrically isolated from the mounting surface. This simplifies the mechanical assembly process by eliminating the need for insulating hardware like mica washers, improving thermal performance, and enhancing reliability by reducing the risk of short circuits.

ICGOOODFIND: The Infineon IPP037N08N stands out as a superior power MOSFET, masterfully balancing ultra-low conduction losses, fast switching capability, and high current handling. Its isolated package and robust performance make it an exceptional choice for engineers designing high-efficiency, high-power-density conversion systems across industrial, computing, and renewable energy sectors.

Keywords: OptiMOS, Low RDS(on), High Efficiency, Power Conversion, Switching Performance.