Infineon BSC252N10NSFGATMA1: High-Efficiency OptiMOS Power MOSFET for Advanced Switching Applications

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC252N10NSFGATMA1 stands out as a premier solution, engineered to meet the rigorous demands of modern high-frequency switching applications. As part of Infineon’s esteemed OptiMOS™ family, this N-channel power MOSFET combines ultra-low on-state resistance with exceptional switching characteristics, making it an ideal choice for applications ranging from DC-DC converters and motor drives to power supplies in computing, telecom, and industrial systems.

A key highlight of the BSC252N10NSFGATMA1 is its remarkably low RDS(on) of just 2.5 mΩ at 10 V gate voltage. This minimal resistance significantly reduces conduction losses, leading to higher overall efficiency and lower heat generation. Such performance is critical in power systems where energy savings and thermal management directly impact operational reliability and system size.

The device is optimized for high-frequency operation, enabling designers to reduce the size of passive components like inductors and capacitors. This not only cuts overall system cost but also allows for more compact and lightweight power designs. Its superior switching performance ensures minimal switching losses, even at elevated frequencies, supporting the trend toward higher power density across various industries.

Packaged in a SuperSO8 clip-bonded package, this MOSFET offers enhanced thermal and electrical performance. The innovative clip bonding technology replaces traditional wire bonds, reducing parasitic inductance and improving current handling capabilities. This results in better reliability under high-stress conditions and efficient heat dissipation, extending the device’s operational lifespan.

Furthermore, the BSC252N10NSFGATMA1 is designed with robustness in mind, featuring a high avalanche ruggedness and an extended safe operating area (SOA). These attributes ensure stable performance in demanding environments, including overload and short-circuit scenarios. With its lead-free and RoHS-compliant construction, the device also aligns with global environmental standards.

ICGOOODFIND: The Infineon BSC252N10NSFGATMA1 sets a high benchmark for power MOSFETs, delivering a blend of ultra-low resistance, high-frequency capability, and robust thermal performance. It is an excellent component for engineers aiming to push the boundaries of efficiency and power density in next-generation switching applications.

Keywords:

Power MOSFET

High Efficiency

Low RDS(on)

Switching Applications

Thermal Performance