Infineon IRFU3607PBF N-Channel Power MOSFET: Datasheet, Application Circuit, and Replacement Guide
The Infineon IRFU3607PBF is a robust N-Channel Power MOSFET renowned for its high current handling capability and low on-state resistance. Designed using advanced process technology, this component is a cornerstone in power management circuits, offering efficiency and reliability for demanding applications.
Key Datasheet Parameters
Understanding the critical parameters from the datasheet is essential for effective implementation:
Drain-Source Voltage (Vds): 55V – Suitable for a wide range of automotive and industrial power systems.
Continuous Drain Current (Id): 180A at 25°C – An exceptionally high current rating, enabling it to drive heavy loads like motors and high-power converters.
On-Resistance (Rds(on)): 4.3 mΩ (max) at Vgs = 10 V – This extremely low on-resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation.
Gate Threshold Voltage (Vgs(th)): 2V to 4V – A standard threshold, making it compatible with most logic-level and standard gate drivers.
Package: TO-220AB – This through-hole package offers excellent power dissipation when mounted on a heatsink.
Typical Application Circuit: Motor Drive
A common application for the IRFU3607PBF is in a DC motor drive circuit. In an H-Bridge configuration, four MOSFETs are used to control the speed and direction of the motor.
1. The IRFU3607PBF serves as the high-side and low-side switch in the bridge.
2. A gate driver IC is mandatory to provide the high current needed to rapidly charge and discharge the MOSFET's large gate capacitance, ensuring fast switching and minimizing time in the linear region.
3. Flyback diodes are placed across the drain and source of each MOSFET to protect against voltage spikes generated by the motor's inductive load.
4. A PWM (Pulse Width Modulation) signal from a microcontroller, amplified by the gate driver, controls the switching of the MOSFETs to vary the motor speed.
This setup leverages the MOSFET's high current capability and low Rds(on) to handle the significant current required by the motor efficiently.
Replacement Guide
Finding a suitable replacement for the IRFU3607PBF requires careful cross-referencing of key specifications.
Direct Equivalents: Look for parts with the same or very similar Vds, Id, Rds(on), and package. Always check the pinout (Pin 1: Gate, Pin 2: Drain, Pin 3: Source) to ensure compatibility.
Key Replacement Candidates:
IRLU3607: A very similar part from Infineon.
STP55NF06L: From STMicroelectronics, offers comparable specs (55V, 60A, Rds(on) = 9 mΩ max).
FDP047N08: From ON Semiconductor (80V, 130A, Rds(on) = 4.7 mΩ max).
Selection Criteria: When choosing a substitute, prioritize:
1. Voltage Rating (Vds): Must be equal to or higher than the original.
2. Current Rating (Id): Should be similar or higher, considering proper heatsinking.
3. On-Resistance (Rds(on)): A lower value is better for efficiency, but a slightly higher value may be acceptable if thermal management is addressed.
4. Gate Charge (Qg): Affects switching speed and driver requirements.
ICGOODFIND: The Infineon IRFU3607PBF is a high-performance power MOSFET optimized for applications demanding high current and minimal losses. Its strength lies in its impressive 180A current rating and very low 4.3 mΩ on-resistance. Successful design hinges on using an appropriate gate driver and robust heatsinking. When replacing it, meticulous comparison of Vds, Id, and Rds(on) is critical to maintaining system performance and reliability.
Keywords: Power MOSFET, High Current, Low On-Resistance, Motor Drive, Replacement Guide
